GaN Group @ TTU (III-N parameters)

III-nitride parameters

Wurtzite polytype:

GaN

AlN

InN

Bandgap energy (eV)

3.44 (300 K)

6.20 (300K)

0.62- 0.7 eV (300K)

Lattice Constant

(Å)

a = 3.189

c = 5.185

a = 3.112

c = 4.982

a = 3.548

c=5.760

Thermal expansion
(x10^-6/K)

da/a = 5.59
dc/c=3.17

da/a = 4.2
dc/c = 5.3

da/a = 4.0
dc/c = 3.0

Thermal conductivity k (W/cm K )

1.3

2.0

0.8

Index of refraction

n(1 eV)=2.33
n(3.38 eV)=2.67

n(3 eV)=2.15

n=2.9-3.05

Dielectric constants

e_r =9

e_¥ =5.35

e_r =8.5

e_¥=4.68-4.84

e_r =15, estimated

e_¥ =8.4

m_e *

0.23

0.33

0.11

m_h *

0.8

2.7

0.5

Zinc-blende structure:

GaN

AlN

InN

Bandgap energy (eV)
(300 K)

3.2-3.3

5.11 (theory)

2.2 (theory)

Lattice constant a
(Å )

4.52

4.38

4.98

Wurtzite polytype:	GaN	AlN	InN
Bandgap energy (eV)	3.44 (300 K)	6.20 (300K)	0.62- 0.7 eV (300K)
Lattice Constant (Å)	a = 3.189 c = 5.185	a = 3.112 c = 4.982	a = 3.548 c=5.760
Thermal expansion (x10^-6/K)	da/a = 5.59 dc/c=3.17	da/a = 4.2 dc/c = 5.3	da/a = 4.0 dc/c = 3.0
Thermal conductivity k (W/cm K )	1.3	2.0	0.8
Index of refraction	n(1 eV)=2.33 n(3.38 eV)=2.67	n(3 eV)=2.15	n=2.9-3.05
Dielectric constants	e_r =9 e_¥ =5.35	e_r =8.5 e_¥=4.68-4.84	e_r =15, estimated e_¥ =8.4
m_e *	0.23	0.33	0.11
m_h *	0.8	2.7	0.5

Zinc-blende structure:	GaN	AlN	InN
Bandgap energy (eV) (300 K)	3.2-3.3	5.11 (theory)	2.2 (theory)
Lattice constant a (Å )	4.52	4.38	4.98